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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA715
DESCRIPTION *Good Linearity of hFE *High Collector-Emitter Breakdown VoltageV(BR)CEO= -35V (Min) *Complement to Type 2SC1162
APPLICATIONS *Designed for use in low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-35
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
-2.5
A
ICM
Collector Current-Peak Collector Power Dissipation @ Ta=25
-3.0
A
0.75 W
PC Total Power Dissipation @ TC=25 TJ Junction Temperature 10
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SA715
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
-35
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -10mA; RBE=
-35
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
-5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
B
-1.0
V
VBE(on)
Base-Emitter On Voltage
IC= -1.5A ; VCE= -2V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -35V; IE= 0
-20
A
hFE-1
DC Current Gain
IC= -0.5A ; VCE= -2V
60
320
hFE-2
DC Current Gain
IC= -1.5A ; VCE= -2V
20
fT
Current-Gain--Bandwidth Product
IC= -0.2A ; VCE= -2V
160
MHz
hFE-1 Classifications B 60-120 C 100-200 D 160-320
isc Websitewww.iscsemi.cn
2


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